Magneto Raman Microscopy for Probing Local Material Properties of Graphene attoRAMAN

Magneto-Raman Microscopy for Probing Local Material Properties of Graphene

The combination of confocal Raman microscopy and magnetic fields at 4 K yields the opportunity to investigate and tune the electron-phonon interaction in graphene and few-layer graphene. In particular, excitations between Landau levels can resonantly couple to the Raman active long wavelength optical phonon (G-phonon), when their energies are matched, resulting in magneto-phonon resonances (MPRs). Such resonances at ±3.7 T are presented in the figure and highlighted by arrows. The details of the coupling depend on various material properties of the investigated graphene layer. From the MPRs, device parameters such as the electron-phonon coupling constant or the Fermi velocity of the charge carriers can be extracted. Interestingly for low charge carrier doping, the Fermi velocity shows signatures of many-body interaction effects.

This measurement was realized with the attoRAMAN.