Semiconductor

Stage Control in Direct-Write EBL Systems

for mask and wafer writing

Direct-write Electron-Beam Lithography (EBL) systems are used in semiconductor processes where extreme precision, flexibility, and design freedom matter more than high production throughput - such as in prototyping or R&D applications. 

In direct-write systems, the electron beam can be precisely deflected within a range of about 100 µm, which corresponds to the size of one writing field. To create a full mask or wafer, millions of these fields are written and stitched with nanometer precision. Any misalignment can lead to overlay errors during wafer printing or interruptions in conductive paths. The process is performed in high-vacuum conditions and requires strict avoidance of electrical and magnetic disturbances. Due to the long writing times these systems operate 24/7.

The precision stage and an integrated interferometric displacement sensor form the backbone of this process: They need to guarantee sub-nanometer accuracy and long-term reliability under demanding conditions, ensuring perfect alignment across millions of fields for years of continuous operation.

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