attocube systems - Nanopositioning Positioning & Microscopy

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	Hexagonal vortex lattice in optimum doped Bi-2212 at a temperature of 4.1 K and a magnetic field of 45 Gauss [more info].			Hexagonal vortex lattice in optimum doped Bi-2212 at a temperature of 4.1 K and a magnetic field of 45 Gauss [more info].

	In-situ characterization of exposed, but undeveloped resist during e-beam lithography processes [more info].			SEM image showing the AFM cantilever glued to a collagen fibril, which is then used to perform tensile strength measurements [more info].

	Scanning Electron Microscope (top) and tuning fork phase image (bottom) of magnetic Co particles confined in an organic matrix [more info].			Confocal Image of the chess-board grating with 2 μm periodicity taken in a UHV environment [more info].

	Manipulating Carbon Nanotubes using attocube ANPxyz50 Positioners in a Scanning Electron Microscope [more info].			Vortex imaging on NbSe2 at 315 mK and 1 T external field. The image was taken at a bias voltage of 1.4 mV [more info].

	AFM contact mode image of quantum rings. Scan range 60 x 60 nm, diam. ca. 20 nm, height < 0.4 nm [more info].			Confocal scan of Graphene on 300 nm SiO2. The optical contrast allows identifying different regions as substrate, single layer and bilayer Graphene. [more info].

	Angle dependent measurements of the Quantum Hall Effect in an AlGaAs two-dimensional electron gas using the ANR30 rotator at 40 mK and 33 T [more info].			Atomic resolution image of a Si(111) surface recorded at room temperature and high vacuum conditions. The scan area was 38 nm x 38 nm [more info].

	Tuning Fork based AFM Measurements of uncapped, stacked InAs Quantum Dots in a GaAs matrix. [more info].			Spatial mapping of carbon nanotubes:Using Raman spectroscopy, the orientation of a CNT was investigated by measuring the polarization intensity signal of the Raman spectrum at 4 K. [more info].

	Near-field measurement in transmission using the attoSNOM I. Vanadium rhomb-Sample on glass substrate with a layer thickness of 10 nm [more info].			Atomic resolution image of an HOPG surface recorded at (a) room temperature and (b) 310 mK and 9 T [more info].

	A color-scale plot of the photoluminescence (PL) versus gate voltage showing the discrete spectral lines of a quantum dot [more info].			The graph above shows the photoluminescence intensity of a triply charged InAs quantum dot vs. magnetic field [more info].

	Scanning photoluminescence spectrum of a bar-like sample of epitaxial GaAs [more info].

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